hexfet ? power mosfet irf6100 parameter max. units v ds drain- source voltage -20 v i d @ t c = 25c continuous drain current, v gs @ 4.5v 5.1 i d @ t c = 70c continuous drain current, v gs @ 4.5v 3.5 a i dm pulsed drain current ? 35 p d @t c = 25c power dissipation ? 2.2 p d @t c = 70c power dissipation ? 1.4 linear derating factor 17 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings w www.irf.com 1 true chip-scale packaging is available from international rectifier. through the use of advanced processing tech- niques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. these benefits, combined with the ruggedized device design , that international rectifier is well known for, provides the designer with an ex- tremely efficient and reliable device. the flipfet ? package, is one-third the footprint of a comparable sot-23 package and has a profile of less than .8mm. combined with the low thermal resistance of the die level device, this makes the flipfet ? the best device for application where printed circuit board space is at a premium and in extremely thin application environ- ments such as battery packs, cell phones and pcmcia cards. description l ultra low r ds(on) per footprint area l low thermal resistance l p-channel mosfet l one-third footprint of sot-23 l super low profile (<.8mm) l available tested on tape & reel flipfet ? isometric symbol parameter typ. max. units r q ja junction-to-ambient ? 56.5 c/w r q j-pcb junction-to-pcb mounted 35 CCC thermal resistance 9/5/01 v dss r ds(on) max i d -20v 0.065 w @v gs = -4.5v -5.1a 0.095 w @v gs = -2.5v -4.1a s d g pd - 93930c
irf6100 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.010 CCC v/c reference to 25c, i d = -1ma CCC CCC 0.065 v gs = -4.5v, i d = -5.1a ? CCC CCC 0.095 v gs = -2.5v, i d = -4.1a ? v gs(th) gate threshold voltage -0.45 CCC -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 9.8 CCC CCC s v ds = -10v, i d = -5.1a CCC CCC -1.0 a v ds = -20v, v gs = 0v CCC CCC -25 v ds = -16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 12v gate-to-source reverse leakage CCC CCC -100 na v gs = -12v q g total gate charge CCC 14 21 i d = -5.1a q gs gate-to-source charge CCC 1.9 2.9 nc v ds = -16v q gd gate-to-drain ("miller") charge CCC 5.0 7.5 v gs = -5.0v t d(on) turn-on delay time CCC 12 CCC v dd = -10v t r rise time CCC 12 CCC i d = -1.0a t d(off) turn-off delay time CCC 50 CCC r g = 5.8 w t f fall time CCC 50 CCC v gs = -4.5v ? c iss input capacitance CCC 1230 CCC v gs = 0v c oss output capacitance CCC 250 CCC pf v ds = -15v c rss reverse transfer capacitance CCC 180 CCC ? = 1.0mhz, see fig. 5 ? repetitive rating; pulse width limited by max. junction temperature. notes: ? pulse width 400s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC -1.2 v t j = 25c, i s = -2.2a, v gs = 0v ? t rr reverse recovery time CCC 48 72 ns t j = 25c, i f = -2.2a q rr reverse recoverycharge CCC 34 51 nc di/dt = 100a/s ? source-drain ratings and characteristics CCC CCC CCC CCC -33 -2.2 a ? when mounted on 1 inch square 2oz copper on fr-4. electrical characteristics @ t j = 25c (unless otherwise specified) i gss w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current ns s d g
irf6100 www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -5.1a fig 4. normalized on-resistance vs. temperature 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -7.00v -5.00v -4.50v -2.50v -1.80v -1.50v -1.20v -1.00v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -1.00v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.00v -5.00v -4.50v -2.50v -1.80v -1.50v -1.20v -1.00v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -1.00v 1 10 100 1.0 1.5 2.0 2.5 3.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
irf6100 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area 0 4 8 12 16 20 24 0 2 4 6 8 10 q , total gate char g e (nc) -v , gate-to-source voltage (v) g gs i = d -5.1a v = -16v ds 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 -v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
irf6100 www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v ds v gs pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit fig 10b. switching time waveforms
irf6100 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0 10203040 -i d , drain current (a) 0.04 0.08 0.12 0.16 r ds (on) , drain-to-source on resistance ( w ) v gs = -2.5v v gs = -4.5v fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage (v) 0.03 0.04 0.05 0.06 0.07 0.08 r ds(on) , drain-to -source on resistance ( w ) i d = -5.1a
irf6100 www.irf.com 7 fig 15. threshold voltage vs. temperature fig 16. typical power vs. time 0.001 0.010 0.100 1.000 10.000 time (sec) 0 4 8 12 16 20 power (w) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -v gs(th) gate threshold voltage (v) i d = -250a
irf6100 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 9/01 flipfet ? outline dimension and tape and reel 1.524 [.060] 4x ? 0.388 [.0153] 0.338 [.0133] 0.800 [.032] 2x b c 1.524 [.060] 0.05 [.002] c 0.280 [.0110] 0.240 [.0094] a 0.537 [.0211] 0.507 [.0199] 0.400 [.016] 4x 0.15 [.006] c a b 0.08 [.003] c 0.20 [.008] c not e s : 1. dimens ioning & t olerancing pe r as me y14.5m-1994. 2. cont rolling dimension: millimeter 3. dimens ions are shown in millimet ers [inches]. 4 2 1 3 0.10 [.004] c 2x 0.10 [.004] c 2x 2 = drain 3 = drain 1 = s ource 4 = gate ball assignments 0.812 [.032] 0.752 [.029] 1. t ape and reel out line conf orms to e ia-481 & eia-541. feed direction 8mm 4mm ? 13 " 8mm ball # 1 cor ne r not e s : 0.800 [.032] 0.800 [.032] 4x ? 0.25 [.010] r e comme nde d f oot pr int drain drain source gat e part marking dat e code 2301 f001 6100 irf pin 1 mark part number lot number
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